Vanadium oxide films with improved characteristics for ir microbolometric matrices

Vanadium oxide (VOx) films intended for use in uncooled IR microbolometric matrices were deposited by reactive magnetron sputtering on silicon substrates. Optimum deposition conditions were determined, which provide for the obtaining of films possessing a current 1/f noise level 3–10 times lower, extended dynamic range, and increased working temperature interval. It was found that the 1/f noise level of the VOx films depends on the VO2 phase content and grain size. It is suggested that the observed 1/f noise is caused by the martensite transformation characteristic of the semiconductor-metal phase transition in VO2.