Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60 nm MOSFETs

Abstract An improved channel resistance method is proposed to extract gate bias dependent source and drain series resistance (RSD), effective channel length (Leff = Lmask-ΔL), and mobility. A nonscaling of the total resistance RTOT = VDS/IDS of short channel device is observed because of mobility degradation of the short channel MOSFETs. The proposed method considers the variation of the effective mobility as a function of channel length.