Optically detected magnetophonon resonances in semiconductor based n -Ge and n -GaAs

We apply the frequency-dependent magnetoconductivity presented previously by one of the present authors not only to bulk nonpolar $(n\ensuremath{-}\mathrm{Ge})$ and polar $(n$-GaAs) semiconductors but also to short-period $\mathrm{Ge}$-based (nonpolar) and $\mathrm{GaAs}$-based (polar) semiconductor superlattices. We also obtain the optically detected magnetophonon resonance (ODMPR) conditions and the energy range in which the relaxation rates are allowed. With the ODMPR conditions and the obtained energy range, qualitative features of the ODMPR effects are investigated according to the incident photon frequency and the strength of the applied magnetic field in the quantum limit condition, in which $\ensuremath{\Elzxh}{\ensuremath{\omega}}_{c}\ensuremath{\gg}{k}_{B}T$ are satisfied. In particular, anomalous behaviors of the ODMPR lineshape such as the splitting and the shift of ODMPR peaks are discussed. Furthermore, the appearance of the plateau between neighboring ODMPR peaks, the disappearance of ODMPR peaks, and changes in the ODMPR amplitude in the semiconductor superlattices are discussed in detail.