Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

[1]  F. Szofran,et al.  Growth and characterization of Hg1−xCdxSe alloys , 1988 .

[2]  P. N. Espy,et al.  Automated ac galvanomagnetic measurement system , 1985 .

[3]  F. Szofran,et al.  Effect of growth parameters on compositional variations in directionally solidified HgCdTe alloys , 1984 .

[4]  F. Szofran,et al.  A method for interface shape control during Bridgman type crystal growth of HgCdTe alloys , 1984 .

[5]  F. Szofran,et al.  Further comments on segregation during Bridgman growth of Cd(x)Hg(1-x)Te , 1984 .

[6]  E. J. Pearce,et al.  Growth of CdxHg1−xTe: Comparison of some properties with the predictions of two melt growth models , 1983 .

[7]  D. Gillies,et al.  One-dimensional analysis of segregation in directionally solidified HgCdTe , 1982 .

[8]  P. N. Gorley,et al.  Mechanisms of Current Carrier Scattering in ZnxHg1–xSe , 1980 .

[9]  S. L. Lehoczy Advanced methods for preparation and characterization of infrared detector materials. [crystallization and phase diagrams of Hg sub 1-x Cd sub x Te] , 1979 .

[10]  P. Capper,et al.  The effects of growth speed on the compositional variations in crystals of cadmium mercury telluride , 1979 .

[11]  C. Summers,et al.  Electron transport in the Hg/sub 1-x/Cd/sub x/Se alloy system , 1978 .

[12]  S. Lehoczky,et al.  Temperature-dependent electrical properties of HgSe , 1974 .

[13]  F. Szofran,et al.  Highly automated transmission-edge mapping , 1988 .

[14]  F. Szofran,et al.  Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments , 1988 .

[15]  W. Spicer,et al.  Effects influencing the structural integrity of semiconductors and their alloys , 1985 .