Oriented PbZrxTi1−xO3 thin films obtained at low substrate temperature by pulsed laser deposition

One step deposition of oriented thin films of PbZrxTi1−xO3 onto (100)- and (111)-Si substrates by pulsed laser ablation at low substrate temperatures (375°C) is reported. X-ray diffraction analysis showed that the films grew with preferential (111) orientation on both substrates but energy dispersive spectroscopy revealed different compositions despite identical targets and substrate temperatures. Direct piezoelectric measurements showed good piezoelectric properties of the films, obtained in the absence of any subsequent poling.

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