A wideband complementary noise cancelling CMOS LNA

A complementary noise cancelling CMOS Low-noise amplifier (LNA) for mobile DTV application with enhanced linearity is proposed. Intrinsic noise cancellation mechanism maintains acceptable NF with reduced power consumption due to current reuse principle. Complementary multi-gated transistor (MGTR) technique is further employed to null the third-order distortion and compensate second-order nonlinearity of noise cancelling stage. Implemented in a 0.18-μm CMOS process, measurement results show that the proposed LNA provides a NF of 3 dB, and a maximum gain of 17.5 dB from 0.1 to 2 GHz. An input 1-dB compression point (IP1dB) and an IIP3 of -3 dBm and 14.3 dBm, respectively, are obtained. The circuit core only draws 9.7 mA from a 2.2 V supply.