EFFECT OF FILM RESISTANCE ON LOW‐IMPEDANCE TUNNELING MEASUREMENTS

Measurements of low‐impedance thin‐film tunneling junctions at room temperature frequently yield inaccurate values for the tunneling resistance. In some cases the indicated resistance is negative. A theory is developed which shows that the finite resistance of the metal films can account for the observations. Results, given for the resistance of a tunneling junction as a function of temperature, show good agreement between theory and experiment.