Wavelength tunable DFB and DBR lasers for coherent optical fibre communications

The mechanisms of wavelength tuning in the multisection distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers are discussed and a review is made of recent progress. It is shown that the maximum wavelength tuning range is limited by the maximum refractive index change in a semiconductor. >

[1]  H. Ishikawa,et al.  Spectral characteristics of a three-section wavelength-tunable DBR laser , 1989 .

[2]  B. Tromborg,et al.  Theoretical analysis of tuning properties for a phase-tunable DFB laser , 1988 .

[3]  Masamichi Yamanishi,et al.  Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications , 1987 .

[4]  Ikuo Mito,et al.  Single frequency and tunable laser diodes , 1988 .

[5]  C. Henry Theory of the linewidth of semiconductor lasers , 1982 .

[6]  Shigehisa Arai,et al.  Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector , 1983 .

[7]  Masahiro Okuda,et al.  Tunability of Distributed Bragg-Reflector Laser by Modulating Refractive Index in Corrugated Waveguide , 1977 .

[8]  Markus-Christian Amann,et al.  Continuously tunable single-frequency laser diode utilising transverse tuning scheme , 1989 .

[9]  Hiroshi Ishikawa,et al.  Tunable, narrow-linewidth and high-power λ/4-shifted DFB laser , 1989 .

[10]  Markus-Christian Amann,et al.  Excess linewidth broadening in wavelength-tunable laser diodes , 1990 .

[11]  Markus-Christian Amann,et al.  Over 7 nm (875 GHz) continuous wavelength tuning by tunable twin-guide (TTG) laser diode , 1990 .

[12]  P. Henry Lightwave primer , 1985 .

[13]  Larry A. Coldren,et al.  Continuously-tunable single-frequency semiconductor lasers , 1987 .

[14]  M. Fukuda,et al.  Continuously tunable thin active layer and multisection DFB laser with narrow linewidth and high power , 1989 .

[15]  M. Wegener,et al.  Large refractive index changes in tunable-electron-density InGaAs/InAlAs quantum wells , 1990, IEEE Photonics Technology Letters.

[16]  J. Bhardwaj,et al.  Dry etching of GaAs and InP for optoelectronic devices , 1989 .

[17]  R. L. Brown,et al.  Continuously tunable distributed feedback laser diode , 1985 .

[18]  B. Broberg,et al.  Widely tunable active Bragg reflector integrated lasers in InGaAsP‐InP , 1988 .

[19]  L. Coldren,et al.  Design of optimized high‐speed depletion‐edge‐translation optical waveguide modulators in III‐V semiconductors , 1987 .

[20]  M. Kuznetsov,et al.  Theory of wavelength tuning in two-segment distributed feedback lasers , 1988 .

[21]  Shigehisa Arai,et al.  Dynamic single-mode semiconductor lasers with a distributed reflector , 1983 .

[22]  Uziel Koren,et al.  Tunable two-segment distributed feedback lasers , 1989 .

[23]  Hiroshi Ishikawa,et al.  Tunable DBR laser with wide tuning range , 1988 .

[24]  U. Koren,et al.  Electrorefraction in GaInAs/InP multiple quantum well heterostructures , 1988 .