Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications
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Dmitri Lubyshev | Sara Bals | Joel M. Fastenau | Andrew Snyder | J. Fastenau | W. K. Liu | D. Lubyshev | X. Fang | S. Bals | A. Snyder | Y. Wu | Y. Wu | X.-M. Fang | M. S. M. Lamb | C. Doss | C. Song | M. Lamb | C. Doss | C. Song
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