Operating method of nonvolatile memory device

Provided are a nonvolatile memory device and an operating method thereof, capable of performing a multi-bit program. The method for operating the nonvolatile memory device including first and second variable resistance memory cells connected to one word line includes the steps of: successively receiving first to fourth data; supplying a first program current for programming the first and second data in the first variable resistance memory cell; and verifying whether the first variable resistance memory cell is in a specific resistance distribution and supplying a second program current for programming the third and fourth data in the second variable resistance memory cell.