Modeling Substrate Voltage Effects on GaN I-V Characteristics with ASM-HEMT model

The substrate voltage $V_{b}$ for GaN on silicon power devices affects their characteristics. The impact of substrate voltage becomes especially critical for the emerging monolithic and integrated circuits. To the best of the authors' knowledge, available GaN compact models neglect the effect of substrate voltage on device characteristics as the substrate is usually grounded in most applications. In this paper, we develop a physics-based model for the substrate-voltage dependence of $I-V$ characteristics of GaN devices. The developed model shows excellent agreement with measurements for GaN devices in both linear and saturation and for different gate widths.

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