Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction

Abstract An evaluation method using the modified hole injection method is proposed to evaluate Negative Bias Temperature Instability (NBTI) in this paper. The physical backgrounds of the evaluation method are strictly discussed. The proposed method accelerates the degradation such as the threshold voltage ( V th ) shift by the amount of the hole injection without the high gate voltage stress. Our experimental and theoretical frameworks clarify that two degradation mechanisms, one follows the reaction–diffusion (R–D) model and another follows the hole trap/de-trap (HTD) model, coexist in NBTI. In the inversion layer, holes distributed in the quantized upper energy levels especially induce the degradation that follows the R–D model, and holes distributed in the ground energy level induce the degradation that follows the HTD model. Finally, the accurate NBTI lifetime prediction is demonstrated using the proposed acceleration method.

[1]  B. Majkusiak,et al.  Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model , 1998 .

[2]  Y. Mitani.  Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[3]  K. Wu,et al.  A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide [MOSFETs] , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[4]  Zhiping Yu,et al.  A new charge model including quantum mechanical effects in MOS structure inversion layer , 2000 .

[5]  K. Jeppson,et al.  Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices , 1977 .

[6]  Steve Jacobs,et al.  The impact of PMOST bias-temperature degradation on logic circuit reliability performance , 2005, Microelectron. Reliab..

[7]  Muhammad Ashraful Alam,et al.  A comprehensive model of PMOS NBTI degradation , 2005, Microelectron. Reliab..

[8]  J. Ushio,et al.  Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces , 2002 .

[9]  E. Murakami,et al.  Modeling of NBTI degradation and its impact on electric field dependence of the lifetime , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[10]  T. Ning.  Capture cross section and trap concentration of holes in silicon dioxide , 1976 .

[11]  N. Collaert,et al.  Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[12]  T. Ma,et al.  Polarity dependent gate tunneling currents in dual-gate CMOSFETs , 1998 .

[13]  S. Takagi,et al.  On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .

[14]  T. Fukai,et al.  Power-aware 65 nm node CMOS technology using variable V/sub DD/ and back-bias control with reliability consideration for back-bias mode , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

[15]  Makoto Hirayama,et al.  Dielectric breakdown caused by hole-induced-defect in thin SiO2 films , 1997 .

[16]  peixiong zhao,et al.  Physical mechanisms of negative-bias temperature instability , 2005 .

[17]  Shimpei Tsujikawa,et al.  Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics , 2005, Microelectron. Reliab..

[18]  Ogawa,et al.  Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface. , 1995, Physical review. B, Condensed matter.

[19]  M.A. Alam,et al.  Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs , 2004, IEEE Transactions on Electron Devices.

[20]  B. Doyle,et al.  NBTI-enhanced hot carrier damage in p-channel MOSFETs , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[21]  D. Frohman-Bentchkowsky,et al.  Dynamic model of trapping‐detrapping in SiO2 , 1985 .

[22]  A. Toriumi,et al.  NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON , 2002, Digest. International Electron Devices Meeting,.

[23]  K. Watanabe,et al.  Accurate circuit performance prediction model and lifetime prediction method of nbt stressed devices for highly reliable ulsi circuits , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[24]  S. Zafar.  Statistical mechanics based model for negative bias temperature instability induced degradation , 2005 .

[25]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[26]  V. Huard,et al.  On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[27]  V. Reddy,et al.  A comprehensive framework for predictive modeling of negative bias temperature instability , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[28]  Alan Mathewson,et al.  A physical compact model for direct tunneling from NMOS inversion layers , 2001 .