论文信息 - Investigation of single-event upset (SEU) in an advanced bipolar process

Investigation of single-event upset (SEU) in an advanced bipolar process

An extensive analytical and experimental study of SEU in an advanced silicon bipolar process was made. The modeling used process and device parameters to model the SEU charge, collection, and circuit response derived from a special version of PISCES in cylindrical coordinates and SPICE, respectively. Data are reported for test cells of various sizes. >

John A. Zoutendyk | Dale F. Berndt | E. C. Secrest

[2] A. Peczalski,et al. Physical SEU model for circuit simulations , 1988 .

[3] Dipen N. Sinha,et al. Transient Measurements of Ultrafast Charge Collection in Semicouductor Diodes , 1987, IEEE Transactions on Nuclear Science.

[4] J. A. Zoutendyk,et al. Experimental Evidence for a New Single-Event Upset (SEU) Mode in a CMOS SRAM Obtained from Model Verification , 1987, IEEE Transactions on Nuclear Science.

[5] John A. Zoutendyk,et al. Lateral charge transport from heavy-ion tracks in integrated circuit chips , 1988 .

[6] P. Thieberger,et al. Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM , 1985, IEEE Transactions on Nuclear Science.