The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
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[1] I. Yoo,et al. Effects of metal electrodes on the resistive memory switching property of NiO thin films , 2008 .
[2] Chenming Hu,et al. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode , 2007 .
[3] M. Yang,et al. Effects of Switching Parameters on Resistive Switching Behaviors of Polycrystalline $\hbox{SrZrO}_{3}$ :Cr-Based Metal–Oxide–Metal Structures , 2008, IEEE Transactions on Electron Devices.
[4] Chih-Yang Lin,et al. Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films , 2008 .
[5] Weidong Yu,et al. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications , 2009 .
[6] Cheol Seong Hwang,et al. Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films , 2007 .
[7] A. Sawa,et al. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.
[8] S. Q. Liu,et al. Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .
[9] Investigation of the Correlation Between Temperature and Enhancement of Electron Tunneling Current Through $\hbox{HfO}_{\bf 2}$ Gate Stacks , 2008, IEEE Transactions on Electron Devices.
[10] S. O. Park,et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .
[11] Frederick T. Chen,et al. Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory , 2008 .
[12] I. Yoo,et al. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.
[13] N. Xu,et al. Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application , 2009, IEEE Electron Device Letters.