Raman study of stress-relieved silicon-on-sapphire films prepared by cw-laser annealing

Continuous‐wave laser annealing experiments for producing stress‐relieved crystalline silicon‐on‐sapphire (c‐SOS) films are reported. A comparative study of laser annealing has been made on c‐SOS and phosphorous‐implanted c‐SOS films. Raman scattering was used to monitor stresses during the laser annealing process and for characterizing the processed films. The best stress‐relieved c‐SOS films were obtained by laser annealing the phosphorous‐implanted chemical‐vapor‐deposition‐grown SOS films.

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