论文信息 - p-diamond/n-GaAs junctions formed by direct bonding

p-diamond/n-GaAs junctions formed by direct bonding

The direct bonding of an n-GaAs thin film onto the surface of epitaxial p-diamond is demonstrated. A rectifying characteristic is obtained for the present p-diamond/n-GaAs bonded junction system. Moreover, the occurrence of the photovoltaic effect at the junction is observed under illumination by an AlGaAs laser operated at 789 nm. A diamond/GaAs pn junction can be formed by direct bonding.

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