论文信息 - Identification of M Centers in InP - 字舞流文

Identification of M Centers in InP

J. Wager | J. V. Vechten | J. A. Vechten

[1] J. Wager,et al. Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors , 1985 .

[2] D. Gutierrez,et al. Channel mobility enhancement in InP metal-insulator-semiconductor field-effect transistors , 1985 .

[3] W. Bonner,et al. MFe center: A configurationally bistable defect in InP: Fe , 1984 .

[4] L. Kimerling,et al. Extrinsic self-trapping and negative U in semiconductors: A metastable center in InP , 1984 .

[5] L. Kimerling,et al. Metastable M center in InP: Defect-charge-state-controlled structural relaxation , 1983 .

[6] L. Kimerling,et al. Electronically controlled metastable defect reaction in InP , 1983 .

[7] J. Buisson,et al. Antisite defects in Inl−yGayAsl−xPx , 1982 .

[8] W. Bonner,et al. Photoluminescence study of native defects in InP , 1981 .

[9] R. Stradling,et al. A study of the deep acceptor levels of iron in InP , 1979 .

[10] L. A. Hemstreet. Electronic states of simple-transition-metal impurities in silicon , 1977 .