Infrared photoluminescence from Er doped porous Si
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[1] S. Sen,et al. SPIN-ON DOPING OF POROUS SILICON AND ITS EFFECT ON PHOTOLUMINESCENCE AND TRANSPORT CHARACTERISTICS , 1997 .
[2] H. Oechsner,et al. Erbium luminescence in porous silicon doped from spin‐on films , 1995 .
[3] Toshiaki Ikoma,et al. Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm , 1994 .
[4] J. Siejka,et al. A quantitative study of impurities in photoluminescent and nonphotoluminescent porous silicon layers , 1993 .
[5] Ortega,et al. Defects in porous p-type Si: An electron-paramagnetic-resonance study. , 1993, Physical review. B, Condensed matter.
[6] J. Siejka,et al. Characterization of porous silicon by NRA, RBS and channeling , 1990 .
[7] R. Soref,et al. Visible and infrared (1.54 μm) emission from Er-lmplanted porous Si for photonic applications , 1996 .
[8] M. Gauneau,et al. Optical Activation of Ion Implanted Rare-Earths , 1993 .