Performance and reliability trade-offs for high-κ RRAM

Abstract Resistive random access memories (RRAM) have shown tremendous potential in replacing Flash technology for future non-volatile data storage device applications in just about a couple of years from now. Although RRAM has various advantages in terms of simple design, high density integration and CMOS compatible process flow, it has its own intrinsic constraints in terms of variability and reliability, just as is the case for any other technology. While performance and reliability are both key metrics for any new product or technology design initiative, the critical aspect to investigate is the trade-off involved in improving them, as the measures implemented to boost performance do not necessarily have a positive impact on its reliability (lifetime). Optimization of the RRAM design for commercial applications requires a clear understanding and acknowledgment of these performance – reliability trade-offs. This study presents a qualitative perspective to identifying and understanding these trade-offs and probing the various sources of variability in high-κ RRAM.

[1]  O. Richard,et al.  10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.

[2]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[3]  L. Goux,et al.  Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability , 2013, 2013 IEEE International Electron Devices Meeting.

[4]  Shibing Long,et al.  From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories , 2011, 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.

[5]  Alexander L. Shluger,et al.  The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 , 2009 .

[6]  T. Hou,et al.  Electrode dependence of filament formation in HfO2 resistive-switching memory , 2011 .

[7]  Daniel D. Frey,et al.  Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework , 2014, 2014 IEEE International Reliability Physics Symposium.

[8]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[9]  L. Larcher,et al.  Metal oxide RRAM switching mechanism based on conductive filament microscopic properties , 2010, 2010 International Electron Devices Meeting.

[10]  Marc Porti,et al.  Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures , 2012 .

[11]  L. Goux,et al.  Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments , 2010, 2010 International Electron Devices Meeting.

[12]  Nagarajan Raghavan,et al.  Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM , 2011 .

[13]  R. Waser,et al.  Electrochemical and thermochemical memories , 2008, 2008 IEEE International Electron Devices Meeting.

[14]  L. Goux,et al.  Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[15]  W. Zwerger,et al.  Where is the potential drop in a quantum point contact , 1998 .

[16]  Ogun Turkyilmaz,et al.  Resistive memories: Which applications? , 2014, 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[17]  Hiroshi Iwai,et al.  Bilayer gate dielectric study by scanning tunneling microscopy , 2007 .

[18]  Xing Wu,et al.  Dielectric breakdown — Recovery in logic and resistive switching in memory — Bridging the gap between the two phenomena , 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

[19]  X. Y. Liu,et al.  Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).