RADIATION CHARACTERIZATION OF A RADIATION HARDENED LOW VOLTAGE DIFFERENTIAL SIGNALING (LVDS) DRIVER AND RECEIVER By

[1]  J. Silva-Martinez,et al.  Low-voltage low-power LVDS drivers , 2005, IEEE Journal of Solid-State Circuits.

[2]  P. Dodd,et al.  Radiation effects in SOI technologies , 2003 .

[3]  R. Koga,et al.  Comparative SEU sensitivities to relativistic heavy ions , 1998 .

[4]  John Choma,et al.  Mixed-mode PISCES-SPICE coupled circuit and device solver , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[5]  Leon Lantz,et al.  Soft errors induced by alpha particles , 1996, IEEE Trans. Reliab..

[6]  A. Boni,et al.  LVDS I/O interface for Gb/s-per-pin operation in 0.35-μ/m CMOS , 2001, IEEE J. Solid State Circuits.

[7]  J. M. Benedetto,et al.  High-speed data transmission for spaceborne applications , 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

[8]  Steven H. Voldman,et al.  Latchup in CMOS technology , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

[9]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[10]  M. Alles,et al.  Model for CMOS/SOI single-event vulnerability , 1989 .