Using pattern shift to avoid blank defects during EUVL mask fabrication
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Kazunori Seki | Emily Gallagher | Toshio Konishi | Yoshiyuki Negishi | Alfred Wagner | Jed H. Rankin | Ahmad Elayat | Peter Thwaite | Steven C. Nash | Yuki Fujita
[1] Tsuyoshi Amano,et al. Impact of the phase defect structure on an actinic dark-field blank inspection signal and wafer printability , 2012, Advanced Lithography.
[2] Tristan Bret,et al. Ebeam based mask repair as door opener for defect free EUV masks , 2012, Photomask Technology.
[3] Tsuyoshi Amano,et al. Fiducial mark requirements from the viewpoints of actinic blank inspection tool for phase-defect mitigation on EUVL mask , 2012, Photomask Technology.
[4] Munehiro Ogasawara,et al. EB alignment function for defect mitigation of EUV blank , 2012, Other Conferences.
[5] Pei-Yang Yan,et al. EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication , 2012, Advanced Lithography.
[6] John Burns,et al. EUV mask defect mitigation through pattern placement , 2010, Photomask Technology.
[7] Ahmad Elayat,et al. EUV mask-blank defect avoidance solutions assessment , 2012, Photomask Technology.
[8] A. Wagner,et al. Mitigation of extreme ultraviolet mask defects by pattern shifting: Method and statistics , 2012 .
[9] Hongbo Zhang,et al. Linear time EUV blank defect mitigation algorithm considering tolerance to inspection inaccuracy , 2012, Photomask Technology.