Influence of carbon monoxide, water and oxygen on high temperature catalytic metal-oxide-silicon carbide structures

High temperature sensors, Schottky diodes and capacitors, based on catalytic metal-oxide-silicon carbide devices are investigated. Reducing gases like hydrogen and other hydrogen containing gases, ...

[1]  A. Spetz,et al.  Electrical properties of inhomogeneous SiC MIS structures , 1995 .

[2]  A. Spetz,et al.  X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors , 1997 .

[3]  G. Coulston,et al.  The dynamics of CO oxidation on Pd, Rh, and Pt studied by high‐resolution infrared chemiluminescence spectroscopy , 1991 .

[4]  Ingemar Lundström,et al.  Structure and ammonia sensitivity of thin platinum or iridium gates in metal-oxide-silicon capacitors , 1989 .

[5]  O. Kordina,et al.  Fast chemical sensing with metal-insulator silicon carbide structures , 1997, IEEE Electron Device Letters.

[6]  M. Armgarth,et al.  Physics with catalytic metal gate chemical sensors , 1989 .

[7]  Ingemar Lundström,et al.  Response of metal-oxide-silicon carbide sensors to simulated and real exhaust gases , 1997 .

[8]  A. Christou,et al.  Pt and PtSix Schottky contacts on n‐type β‐SiC , 1989 .

[9]  U. Jansson,et al.  Chemical Vapor Deposition of Tungsten Schottky Diodes to 6H‐SiC , 1996 .

[10]  Ingemar Lundström,et al.  Gas sensitive field effect devices for high temperature , 1995 .

[11]  M. Östling,et al.  Cobalt disilicide (CoSi2) Schottky contacts to 6H-SIC , 1994 .

[12]  Performance of Carbon monoxide-sensitive MOSFET's with metal-Oxide semiconductor gates , 1985, IEEE Transactions on Electron Devices.

[13]  F. Zaera,et al.  Determination of the rate limiting step in the oxidation of CO on Pt(111) surfaces , 1996 .

[14]  R. Mccabe,et al.  The passivating oxidation of platinum , 1988 .

[15]  Vladimir P. Zhdanov,et al.  Catalytic ignition in the COO2 reaction on platinum: experiment and simulations , 1997 .

[16]  Mats Eriksson,et al.  The influence of CO on the response of hydrogen sensitive Pd-MOS devices , 1997 .

[17]  G. Bansal,et al.  Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors , 1996 .

[18]  Maximilian Fleischer,et al.  Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin films , 1992 .

[19]  I. Lundstrom,et al.  Fast Responding High Temperature Sensors For Combustion Control , 1995, Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.

[20]  A. Vengurlekar,et al.  Contrasts in electron and hole trapping phenomena in pyrogenic oxides grown with different H2O partial pressures on silicon , 1987 .

[21]  Robert F. Davis,et al.  High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films , 1987 .

[22]  Philip G. Neudeck,et al.  Progress in silicon carbide semiconductor electronics technology , 1995 .

[23]  Mats Eriksson,et al.  Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen‐sensitive field‐effect devices: Observation of large hydrogen‐induced dipoles at the Pd‐SiO2 interface , 1995 .

[24]  Ingemar Lundström,et al.  A hydrogen−sensitive MOS field−effect transistor , 1975 .