Electromigration testing—A current problem

Abstract Electromigration is arousing growing interest and concern as a potential failure mechanism in integrated circuit metallization, particularly from users and designers of LSI and other small-geometry devices, in which current densities of 10 5 –10 6 A/cm 2 are becoming increasingly common. This paper examines the various problems associated with conducting and evaluating electromigration tests in order to obtain valid lifetime information about actual devices. The literature is reviewed to indicate the extent and relevancy of the available data, as well as the numerous contradictions and uncertainties that exist. The problems that arise with test procedures, measurements, and the evaluation and application of test data are examined and means for surmounting such problems are suggested.

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