论文信息 - Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Epitaxial graphene was grown on the surface of on-axis and off-axis SiC (0001) by solid state graphitization at high temperatures (2000 °C) in Ar ambient. The effect of the miscut angle on the lateral uniformity of the few layers of graphene (FLG) was investigated by combined application of micro-Raman spectroscopy and Torsion Resonance Conductive Atomic Force Microscopy, the latter method enabling a quantification of the FLG coverage on SiC with submicrometer lateral resolution. While the on-axis samples result in uniform coverage by thin (~ 3 monolayers) FLG, the coverage for off-axis samples is much less uniform, following closely the step bunching morphology of the SiC surface.

[1] Philippe Godignon,et al. Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC , 2009 .

[2] J. Jia,et al. Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001) , 2009, Nanotechnology.

[3] H. B. Weber,et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. , 2009, Nature materials.

[4] Mikael Syväjärvi,et al. Homogeneous large-area graphene layer growth on 6H-SiC(0001) , 2008 .

[5] C. Berger,et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. , 2004, cond-mat/0410240.

[6] Gong Gu,et al. Temperature Dependence of Epitaxial Graphene Formation on SiC(0001) , 2009 .