Light induced degradation: kinetic model and grain boundary impact on sponge-LID
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[1] Stephan Großer,et al. Intra-grain versus grain boundary degradation due to illumination and annealing behavior of multi-crystalline solar cells , 2016 .
[2] Giso Hahn,et al. Kinetics of the boron-oxygen related defect in theory and experiment , 2010 .
[3] K. Bothe,et al. Electronically activated boron-oxygen-related recombination centers in crystalline silicon , 2006 .
[4] T. Sekiguchi,et al. Electron-beam-induced current study of grain boundaries in multicrystalline silicon , 2004 .
[5] Peter Engelhart,et al. Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature , 2015 .
[6] M. Pickett,et al. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration , 2006 .
[7] Chung-Wen Lan,et al. Development of high‐performance multicrystalline silicon for photovoltaic industry , 2015 .
[8] L. Kimerling,et al. Electronically controlled reactions of interstitial iron in silicon , 1983 .
[9] Jochen Friedrich,et al. Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale , 2014 .
[10] Hele Savin,et al. Review of light-induced degradation in crystalline silicon solar cells , 2016 .
[11] M. Yang,et al. The emergence of high-performance multi-crystalline silicon in photovoltaics , 2017 .