Very low complexity RF-MEMS technology for wide range tunable microwave filters
暂无分享,去创建一个
This paper presents tunable microstrip filters in the GHz range, fabricated on silicon in a very low complexity RF-MEMS process with only one metallization layer. Affected by a mechanic stress gradient in the metallization, free standing parts of the structure roll up. These bended beams can be switched onto the substrate by electrostatic actuation and thus tune the resonance frequency by changing the /spl epsiv//sup r eff/ of the resonant structure. The technology offers the possibility to realize tunable filters with a small insertion loss of less than 1.5dB at 30GHz for bandpass and for bandstop filters and a large frequency shift of about 20% in operation frequency.
[1] Volker Ziegler,et al. Low-complexity RF-MEMS technology for microwave phase shifting applications , 2005 .
[2] Gabriel M. Rebeiz,et al. RF MEMS switches and switch circuits , 2001 .
[3] Laurent Dussopt,et al. Miniature and tunable filters using MEMS capacitors , 2003 .
[4] RF-MEMS switches based on a low-complexity technology and related aspects of MMIC integration , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.