论文信息 - Numerical simulations of contact resistance in organic thin-film transistors

Numerical simulations of contact resistance in organic thin-film transistors

The origin of the source/drain contact resistance reported in studies of pentacene-based organic thin-film transistors (OTFTs) has been investigated using numerical device simulations. Quantitative agreement with published contact resistance values is obtained, using reasonable values for the physical parameters describing both the semiconductor material and the metal/organic interfaces. In particular, the difference in contact resistance measured in top and bottom contact OTFTs has been reproduced.

Ian G. Hill | I. Hill

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