Systems, methods, and apparatuses for complementary metal oxide semiconductor(cmos) antenna switches using body switchting in multistacking structure

The present invention provides a CMOS antenna switch called SP4T CMOS switch. According to an aspect of the invention, the CMOS antenna switch may operate in a plurality of frequencies between about 900 MHz and 1.9 GHz. The CMOS antenna switch may include both transmission and reception switch switches. The receiving switch, can maintain a low insertion loss in the receive path and the use of multiple stacked (multi-stack) transistor having a body substrate (substrate body) to adjust so as to block the signal of the high power from the transmission path. On the other hand, in the transmitting switch and modulation technique due to the substrate body it may be applied to maintain a high power transfer to the antenna. CMOS antenna switch according to an embodiment of the present invention provides a 31 dBm P1dB in two frequency bands (e.g., 900 MHz and 1.8 GHz). Further, according to one embodiment of the present invention, it is possible to obtain an insertion loss of 0.9 dB and -1.1 dB, respectively at 900 MHz and 1.9 GHz. Complementary metal oxide semiconductor (CMOS), switches, antennas, transmit (Tx), reception (Rx), the leakage current, the insertion loss, isolation and power

[1]  Zuo-Min Tsai,et al.  A miniature low-insertion-loss, high-power CMOS SPDT switch using floating-body technique for 2.4- and 5.8-GHz applications , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.