Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance

Defect concentrations in low-k organosilicate glass films deposited on high-resistivity silicon were measured with electron-spin resonance. Bulk dangling bonds were detected. Both plasma exposure and ultraviolet exposure were used. During argon electron cyclotron resonance plasma exposure, ion and photon bombardment increased the measured defect concentrations. Ultraviolet lamp exposure was also shown to increase the defect concentrations. Dielectric samples with various dielectric constants were examined showing that as the value of the dielectric constant was lowered, the defect concentrations were shown to increase significantly.

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