Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors

Bare Au-gated and thioglycolic acid functionalized Au-gated AlGaN/GaN high electron mobility transistors were used to detect mercury(II) and copper(II) ions. Fast detection of <5 s was achieved for thioglycolic acid functionalized sensors. The thioglycolic acid functionalization increased the sensitivity for detection of mercury by 2.5 times over the bare Au-gated surface. Both surfaces had a selectivity of approximately 100-fold over other contaminating ions of sodium, magnesium, and lead and can be easily recycled. Our results show that portable, selective, and fast Cu 2+ and Hg 2+ sensors can be realized by combining bare Au-gated and thioglycolic acid-functionalized surface in one sensor.

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