论文信息 - 9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on - 字舞流文

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

A. Agarwal | S. Ryu | M. Das | J. Palmour | B. Heath | C. Jonas | Q. C. Zhang | Q. Zhang