Secondary Effects of Single Ions on Floating Gate Memory Cells

A programmed Floating Gate (FG) hit by a heavy ion experiences a large charge loss, which degrades the stored information. However, as a result of irradiation, even FGs not directly hit by ions can experience a shift in the programmed threshold voltage. These latter FGs can be found only in novel technologies with very small floating gates. Further, they have particular characteristics when compared to the cells directly hit by an ion: are characterized by a tendency to cluster, feature a peculiar threshold voltage distribution after irradiation, and do not experience radiation induced leakage current. These FGs are probably generated by ions crossing the device "close enough" to the floating gate, without directly hitting it

[1]  Alessandro Paccagnella,et al.  Subpicosecond conduction through thin SiO2 layers triggered by heavy ions , 2006 .

[2]  H. Puchner,et al.  Investigation of multi-bit upsets in a 150 nm technology SRAM device , 2005, IEEE Transactions on Nuclear Science.

[3]  A. Visconti,et al.  Single Event Effects in NAND Flash memory arrays , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

[4]  A. Candelori,et al.  Transient conductive path induced by a Single ion in 10 nm SiO/sub 2/ Layers , 2004, IEEE Transactions on Nuclear Science.

[5]  J. Barak,et al.  Spatial distribution of electron-hole pairs induced by electrons and protons in SiO/sub 2/ , 2004, IEEE Transactions on Nuclear Science.

[6]  A. Paccagnella,et al.  A review of ionizing radiation effects in floating gate memories , 2004, IEEE Transactions on Device and Materials Reliability.

[7]  P. Murray,et al.  SEE and TID test results of 1 Gb flash memories , 2004, 2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774).

[8]  R. Koga,et al.  SEE sensitivities of selected advanced flash and first-in-first-out memories , 2004, 2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774).

[9]  J. Barak,et al.  New monte-carlo calculations of charged particle track-structure in silicon , 2004, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[10]  A. Candelori,et al.  Data retention after heavy ion exposure of floating gate memories: analysis and simulation , 2003 .

[11]  D. Bortolato,et al.  Errata to “Identification and Classification of Single-Event Upsets in the Configuration Memory of SRAM-Based FPGAs” , 2003 .

[12]  J. Rodgers,et al.  Chalcogenide memory arrays: characterization and radiation effects , 2003 .

[13]  Leif Z. Scheick,et al.  TID, SEE and radiation induced failures in advanced flash memories , 2003, 2003 IEEE Radiation Effects Data Workshop.

[14]  A. Candelori,et al.  Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation , 2002 .

[15]  A. Johnston,et al.  Single-event upset in power-PC processors , 2002 .

[16]  D. S. Walsh,et al.  SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments , 2001 .

[17]  Alessandro Paccagnella,et al.  Radiation effects on floating-gate memory cells , 2001 .

[18]  L. Scheick,et al.  TID testing of ferroelectric nonvolatile RAM , 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

[19]  R. Koga,et al.  SEE sensitivity determination of high-density DRAMs with limited-range heavy ions , 2000, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

[20]  Sumio Matsuda,et al.  Analysis of single-ion multiple-bit upset in high-density DRAMs , 2000 .

[21]  G. M. Swift,et al.  SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory , 2000, 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527).

[22]  D. Krawzsenek,et al.  Single event effects and total ionizing dose results of a low voltage EEPROM , 2000, 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527).

[23]  D. M. Hiemstra,et al.  Single event upset characterization of the Pentium(R) MMX and Celeron(R) microprocessors using proton irradiation , 2000, 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527).

[24]  Steven M. Guertin,et al.  SEU evaluation of SRAM memories for space applications , 2000, 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527).

[25]  G. M. Swift,et al.  In-flight observations of multiple-bit upset in DRAMs , 2000 .

[26]  Allan H. Johnston,et al.  Radiation effects on advanced flash memories , 1999 .

[27]  Carla Golla,et al.  Flash Memories , 1999 .

[28]  Jih-Jong Wang,et al.  SRAM based re-programmable FPGA for space applications , 1999 .

[29]  A. B. Campbell,et al.  Analysis of multiple bit upsets (MBU) in CMOS SRAM , 1996 .

[30]  T. R. Oldham,et al.  Recombination along the tracks of heavy charged particles in SiO2 films , 1985 .

[31]  Feller William,et al.  An Introduction To Probability Theory And Its Applications , 1950 .