论文信息 - Measurement of ionization loss of 50 GeV protons in silicon with smoothly tunable up to 1 cm thickness using a single flat detector - 字舞流文

Measurement of ionization loss of 50 GeV protons in silicon with smoothly tunable up to 1 cm thickness using a single flat detector

V. Maisheev | R. M. Nazhmudinov | A. Afonin | G. Britvich | Y. Chesnokov | A. Durum | M. Kostin | A. Yanovich | A. Kubankin | A. V. Shchagin | R. Nazhmudinov | V. Pitalev