论文信息 - Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices - 字舞流文

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Michaela R. Johnson | David J. Smith | F. Ren | S. Pearton | D. Cullen | Chih-Yang Chang | T. Kang | Soohwan Jang | J. W. Johnson | Li Liu