Reliability of GaAs MESFETs
暂无分享,去创建一个
Bruno Ricco | P. Brambilla | Fausto Fantini | F. Magistrali | B. Riccò | F. Fantini | F. Magistrali | P. Brambilla
[1] J. Bresse. Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in lownoise dual gate GaAs FET , 1985 .
[2] Aristos Christou. Reliability problems in state‐of‐the‐art GaAs devices and circuits , 1989 .
[3] J. C. Irvin,et al. Failure Mechanisms and Reliability of Low-Noise GaAs FETs , 1978, 1978 8th European Microwave Conference.
[4] H. Kohzu,et al. Reliability Study of GaAs MESFET's , 1976 .
[5] C. Canali,et al. Test fixture for MESFET reliability life tests , 1987 .
[6] F. Fantini,et al. Degradation mechanisms induced by high current density in Al-gate GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.
[7] Massimo Vanzi,et al. Electromigration effects in power MESFET rectifying and ohmic contacts , 1987 .
[8] D. D. Khandelwal,et al. GaAs FET principles and technology , 1982 .
[9] F. Fantini,et al. Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's , 1986, IEEE Electron Device Letters.
[10] H. Kodera,et al. Degradation mechanism of GaAs MESFET's , 1979, IEEE Transactions on Electron Devices.
[11] J. A. Turner,et al. Some Aspects of GaAs MESFET Reliability , 1976 .
[12] F. H. Reynolds,et al. Semiconductor Component Accelerated Testing and Data Analysis , 1982 .
[13] C. Canali,et al. Degradation mechanisms induced by temperature in power MESFETs , 1985 .
[14] A. S. Jordan,et al. Planning of aging experiments for semiconductor devices by means of the assurance test matrix , 1984 .