MOSFET degradation dependence on input signal power in a RF power amplifier

Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reduction is the main cause of the RF degradation in this circuit. Display Omitted An experimental set-up has been proposed to analyze the RF degradation on a Power Amplifier (PA) as a function of input signal power.The implemented set-up allows applying RF stress and also the characterization of its effects on both the devices and PA.A direct relation between device/PA DC performance degradation and PA RF gain decrease is observed.The aging observed in the PA has been related to a mobility reduction in both, being the NMOS transistor the most degraded

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