X‐ray imaging with a charge‐coupled device fabricated on a high‐resistivity silicon substrate

In this letter results are reported on x‐ray imaging experiments performed with a buried channel charge‐coupled‐device line array optimized for photon sensing in the 1–10‐keV range. Optimization was achieved by increasing the depletion depth of the device to 254 μ. A near‐unity detector quantum efficiency (98%) was thus achieved. There was no observable image blurring due to diffusive spreading of signal charge as a result of the field‐assisted transport to the well minima.