Germane discharge chemistry

The stable gas products of germane dissociation and subsequent radical reactions have been measured in pure germane glow discharges characteristics of the initial germane fragmentation are inferred from these data. The spatial distribution of discharge optical emission, and of film deposition on glass fibers, have also been measured. Finally, the surface reaction probability β of depositing neutral radicals has been measured to be 0.61±0.09 on the grounded electrode. Major differences between germane and silane discharges occur in all these observables. Possible explanations of these differences are given, but much less chemical data exists for germane, thereby precluding definitive judgments. A probable cause of the normally much poorer semiconductor quality of a‐Ge:H films, compared to a‐Si:H, is suggested. This is based on the thermodynamics of the H2 release reaction at the growing surface.

[1]  R. Walsh,et al.  Kinetics of the gas‐phase reaction between iodine and monogermane and the bond dissociation energy D(H3GeH) , 1983 .

[2]  Alan Gallagher,et al.  Production of high-quality amorphous silicon films by evaporative silane surface decomposition , 1988 .

[3]  H. Matsumura Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous silicon , 1989 .

[4]  Alan Gallagher,et al.  Neutral radical deposition from silane discharges , 1988 .

[5]  M. Boudart,et al.  The Thermal Decomposition of Germane. I. Kinetics. , 1955 .

[6]  A. Gallagher,et al.  Surface reaction probability of film‐producing radicals in silane glow discharges , 1990 .

[7]  J. Eden,et al.  Activation energy and spectroscopy of the growth of germanium films by ultraviolet laser‐assisted chemical vapor deposition , 1985 .

[8]  J. Perrin,et al.  Quenching of excited mercury atoms (6 3P1 and 6 3P0) in collisions with SiH4, SiD4, Si2H6 and GeH4 , 1988 .

[9]  G. Mains,et al.  THE ($sup 3$P$sub 1$) MERCURY-PHOTOSENSITIZED DECOMPOSITION OF MONOGERMANE , 1966 .

[10]  J. Perrin,et al.  Dissociative excitation of SiH4, SiD4, Si2H6 and GeH4 by 0–100 eV electron impact , 1983 .

[11]  A. Gallagher,et al.  Silane dissociation products in deposition discharges , 1990 .

[12]  J. Perrin,et al.  Dissociation cross sections of silane and disilane by electron impact , 1982 .

[13]  George R. Smith,et al.  Products of the Vacuum‐Ultraviolet Photolysis of Germane Isolated in an Argon Matrix , 1972 .

[14]  Lin,et al.  Structural, electrical, and optical properties of a-Si1-xGex:H and an inferred electronic band structure. , 1985, Physical review. B, Condensed matter.

[15]  K. Ramaprasad,et al.  Mercury photosensitized reactions of monogermane with nitric oxide , 1975 .

[16]  A. Matsuda,et al.  Deposition Kinetics and Structural Control of Highly Photosensitive A-SiGe:H Alloys , 1986 .

[17]  R. Walsh,et al.  Germanium-hydrogen bond strengths in germanes , 1982 .

[18]  A. Gallagher,et al.  Spatial distribution of a-Si:H film-producing radicals in silane rf glow discharges , 1990 .

[19]  J. Błażejowski,et al.  Tetrafluorosilane-sensitized decomposition of germane by a pulsed carbon dioxide TEA laser , 1989 .

[20]  A. Gallagher,et al.  Plasma Chemistry in Silane and Silane-Germane Discharge Deposition , 1989 .

[21]  M. Gennaro,et al.  γ-Radiolysis of monogermane and the formation of solid germanium hydride polymers , 1987 .

[22]  P. McMarr,et al.  Spectroscopic ellipsometry study of glow‐discharge‐deposited thin films of a‐Ge:H , 1986 .

[23]  H. Svec,et al.  The Mass Spectra of Volatile Hydrides. II. Some Higher Hydrides of the Group IVB and VB Elements , 1963 .

[24]  J. Norman Bardsley,et al.  Nonequilibrium processes in partially ionized gases , 1990 .

[25]  J. Perrin,et al.  a-Si:H Deposition from SiH4 and Si2H6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition , 1988 .

[26]  F. C. Marques,et al.  Structural, optical, and electrical characterization of improved amorphous hydrogenated germanium , 1990 .