High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

We have been developing CO 2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO 2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 17) in 2014. We have proved high average power CO 2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation . Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 2016 . Recently we have demonstrated, EUV power recorded at113W in burst stabilized (85W in average, 75% duty), with 5% conversion efficiency during 143hours operation. Also the Pilot#1 system recorded 64% availability and idle time was 25%. Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= -0.5%/Gp) above 100W level operation with dummy mirror test 22) . Very low degradation (= 0.4%/Gp) of actual collector mirror reflectance has been demonstrated above 100W level operation (in burst) with magnetic mitigation EUV source.