Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor
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N. Grote | W. Ebert | D. Franke | P. Harde | P. Wolfram | N. Sabelfeld
[1] J. Kreissl,et al. MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride , 2000 .
[2] C. Tu,et al. Chemical Beam Etching of GaAs Using a Novel Precursor of Tertiarybutylchloride (TBCl) , 1999 .
[3] G. Morello,et al. Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds , 1998 .
[4] N. Nordell,et al. INFLUENCE OF MOVPE GROWTH-CONDITIONS AND CCL4 ADDITION ON INP CRYSTAL SHAPES , 1992 .
[5] A. Clawson. In situ vapor-etch for InP MOVPE using ethylene dibromide , 1984 .
[6] C. Caneau,et al. Etching of InP by HCl in an OMVPE reactor , 1991 .