Increasing the semiconducting fraction in ensembles of single-walled carbon nanotubes

Abstract The carbon source and growth conditions for single-walled carbon nanotube (SWCNT) growth in hot-wall chemical vapor deposition affect the chirality of the SWCNT ensemble produced. Raman spectroscopy elucidates the trends of the SWCNT semiconducting percentage grown under different conditions. Field-effect transistors using few SWCNTs per transistor were fabricated to allow for a semiconducting SWCNT enumeration and to confirm these trends. The semiconducting SWCNT percent in isopropanol-based devices peaked at 800 °C with 85% semiconducting. 2-Butanol-based and methane-based devices were 70% and 32% semiconducting, respectively.

[1]  Ming Zheng,et al.  DNA sequence motifs for structure-specific recognition and separation of carbon nanotubes , 2009, Nature.

[2]  M. Dresselhaus,et al.  Physical properties of carbon nanotubes , 1998 .

[3]  H. Dai,et al.  Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction , 2006, Science.

[4]  Mark C. Hersam,et al.  Sorting carbon nanotubes by electronic structure using density differentiation , 2006, Nature nanotechnology.

[5]  M. Lundstrom,et al.  Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[6]  J. Rogers,et al.  High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. , 2007, Nature nanotechnology.

[7]  H. Kataura,et al.  Large-scale single-chirality separation of single-wall carbon nanotubes by simple gel chromatography , 2011, Nature communications.

[8]  Xue Lin,et al.  Synthesis and device applications of high-density aligned carbon nanotubes using low-pressure chemical vapor deposition and stacked multiple transfer , 2010 .

[9]  M. Zheng,et al.  DNA-assisted dispersion and separation of carbon nanotubes , 2003, Nature materials.

[10]  Jie Deng,et al.  A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking , 2007, IEEE Transactions on Electron Devices.

[11]  P. Avouris,et al.  Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown , 2001, Science.

[12]  H. Wong,et al.  Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes , 2009, IEEE Transactions on Nanotechnology.

[13]  Hai Wei,et al.  Imperfection-immune VLSI logic circuits using Carbon Nanotube Field Effect Transistors , 2009, 2009 Design, Automation & Test in Europe Conference & Exhibition.

[14]  Christian Thomsen,et al.  Carbon Nanotubes: Basic Concepts and Physical Properties , 2004 .

[15]  J. Rogers,et al.  Improved Density in Aligned Arrays of Single‐Walled Carbon Nanotubes by Sequential Chemical Vapor Deposition on Quartz , 2010, Advanced materials.

[16]  John Robertson,et al.  In-situ X-ray Photoelectron Spectroscopy Study of Catalyst−Support Interactions and Growth of Carbon Nanotube Forests , 2008 .