Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching

The contribution of radicals emitted from the bottom of an etched pattern to the deposition of a film on the sidewall in a CHF3 plasma was investigated using a specially designed experimental system. In the experimental system, a target (1), simulating the bottom of an etched pattern, emits various types of radicals after collision with incident ions. Among the radicals and ions that are incident on a target (2), which is located in close proximity to the target (1), to simulate the sidewall of an etched pattern, ions were prevented from arriving at the surface by placing a double grid structure in front of the target (2). The deposition rate and the composition of the film formed on the target (2) were measured for the cases where the target (1) was made of different materials and subject to impingement by ions at different bias voltages. In another set of experiments, a rectangular tube of a predetermined length was located in front of the target (2) for the purpose of estimating the probability of radi...

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