Physical and Electrical Modelling of Bonding Wires up to 110 GHz

This paper presents an electrical model of bonding wire effects. This model fits in Ka to W bands and it can be easily used in an electrical simulator. It takes into account the different coupling effects which appear in such structures and it uses analytical formulas to calculate the components of the equivalent circuit. This bonding wire electrical model has been validated by comparing it to 3D electromagnetic simulations and measures. Bonding wire structures have been realised with a MEMs technique developed on a Silicon substrate and they have been characterised up to 110 GHz. The model and the results of simulations and measures are presented and prove that the bonding wire technique can be used in the millimeter wave band.