Effect of atmosphere on reliability of passivated 0.15 /spl mu/m InAlAs/InGaAs HEMTs

The influence of ambient atmosphere on the long term stability of InP-based HEMTs has been investigated. By performing accelerated stress tests at elevated temperature the authors found that the electrical parameter drift is much faster in air than in nitrogen. The importance of a stabilisation bake in nitrogen after the fabrication process is demonstrated.