Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium–Gallium–Zinc-Oxide Thin Film Transistors

[1]  H. Hosono.  Recent progress in transparent oxide semiconductors: Materials and device application , 2007 .

[2]  H. S. Frank.  Covalency in the hydrogen bond and the properties of water and ice , 1958, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[3]  Hyun Jae Kim,et al.  Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors , 2009 .

[4]  Gun Hee Kim,et al.  Inkjet-printed InGaZnO thin film transistor , 2009 .

[5]  Hideo Hosono,et al.  Material characteristics and applications of transparent amorphous oxide semiconductors , 2010 .

[6]  Gun Hee Kim,et al.  Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor , 2009 .

[7]  Noboru Yamazoe,et al.  Interactions of tin oxide surface with O2, H2O AND H2 , 1979 .

[8]  Y. Shimizu,et al.  Humidity‐Sensitive Characteristics of La3+‐Doped and Undoped SrSnO3 , 1989 .

[9]  Pedro Barquinha,et al.  Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature , 2004 .

[10]  Enrico Traversa,et al.  A novel humidity-detection mechanism for ZnO dense pellets , 1995 .

[11]  Enrico Traversa,et al.  Ceramic sensors for humidity detection: the state-of-the-art and future developments , 1995 .

[12]  H. Ohta,et al.  Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor , 2003, Science.

[13]  J. Boyle,et al.  The effects of CO, water vapor and surface temperature on the conductivity of a SnO2 gas sensor , 1977 .

[14]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[15]  Randy Hoffman,et al.  Transparent thin-film transistors with zinc indium oxide channel layer , 2005 .

[16]  Hyun-Joong Chung,et al.  Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water , 2008 .

[17]  Changjung Kim,et al.  Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules , 2007 .