Short-wavelength infrared defect emission as probe for degradation effects in diode lasers
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[1] Anna Kozlowska,et al. Infrared imaging of semiconductor lasers , 2007 .
[2] Thomas Elsaesser,et al. Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation , 2014, Photonics West - Lasers and Applications in Science and Engineering.
[3] Thomas Elsaesser,et al. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers , 2011 .
[4] M. Bettiati,et al. Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers , 2006, SPIE LASE.
[5] Martin Hempel,et al. Defect temperature kinetics during catastrophic optical damage in high power diode lasers , 2014, Photonics West - Optoelectronic Materials and Devices.
[6] M. Bugajski,et al. Analysis of thermal images from diode lasers: Temperature profiling and reliability screening , 2005 .
[7] C. Harder,et al. Pump diode lasers , 2008 .
[8] S. Sweeney,et al. Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers , 2003 .
[9] Thomas Elsaesser,et al. Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers , 2014 .
[10] S. M. Abbott,et al. Measurement of spatial distribution of long‐wavelength radiation from GaAlAs injection lasers , 1979 .
[11] J. W. Tomm,et al. Microscopic Origins of Catastrophic Optical Damage in Diode Lasers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.
[12] Frank Bugge,et al. Infrared emission from the substrate of GaAs-based semiconductor lasers , 2008 .
[13] Hajime Imai,et al. Deep level associated with the slow degradation of GaAlAs DH laser diodes , 1978 .
[14] J. M. Whelan,et al. Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide , 1959 .
[15] Byron L. Meadows,et al. Thermal characteristics of high-power long-pulsewidth quasi-CW laser diode arrays , 2004, SPIE LASE.