Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

The infrared emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 7.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm is found to originate from defect states located within the waveguide of the devices. The SWIR intensity is verified to represent a measure of the non-equilibrium carrier concentration in the waveguide, allowing for non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for in situ analysis of the damage patterns. Moreover, spatial resolved SWIR measurements are a promising tool for device inspecting even in low-power operation regimes.

[1]  Anna Kozlowska,et al.  Infrared imaging of semiconductor lasers , 2007 .

[2]  Thomas Elsaesser,et al.  Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation , 2014, Photonics West - Lasers and Applications in Science and Engineering.

[3]  Thomas Elsaesser,et al.  Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers , 2011 .

[4]  M. Bettiati,et al.  Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers , 2006, SPIE LASE.

[5]  Martin Hempel,et al.  Defect temperature kinetics during catastrophic optical damage in high power diode lasers , 2014, Photonics West - Optoelectronic Materials and Devices.

[6]  M. Bugajski,et al.  Analysis of thermal images from diode lasers: Temperature profiling and reliability screening , 2005 .

[7]  C. Harder,et al.  Pump diode lasers , 2008 .

[8]  S. Sweeney,et al.  Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers , 2003 .

[9]  Thomas Elsaesser,et al.  Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers , 2014 .

[10]  S. M. Abbott,et al.  Measurement of spatial distribution of long‐wavelength radiation from GaAlAs injection lasers , 1979 .

[11]  J. W. Tomm,et al.  Microscopic Origins of Catastrophic Optical Damage in Diode Lasers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[12]  Frank Bugge,et al.  Infrared emission from the substrate of GaAs-based semiconductor lasers , 2008 .

[13]  Hajime Imai,et al.  Deep level associated with the slow degradation of GaAlAs DH laser diodes , 1978 .

[14]  J. M. Whelan,et al.  Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide , 1959 .

[15]  Byron L. Meadows,et al.  Thermal characteristics of high-power long-pulsewidth quasi-CW laser diode arrays , 2004, SPIE LASE.