论文信息 - High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system

High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system

A low-voltage GaAs power amplifier for 1.9-GHz digital mobile communication applications such as PHS handsets has been developed, using refractory WNx/W self-aligned gate MESFETs with p-pocket layers. This power amplifier operates with a single low 2-V supply, and an output power of 21.0 dBm, a power gain of 22.3 dB, a low dissipated current of 162.9 mA and a high power-added efficiency of 38.5% were attained with a low 600-kHz adjacent channel leakage power of -58.0 dBc for 1.9-GHz /spl pi//4-shifted QPSK modulated input.

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[2] Katsue Kawakyu,et al. High-efficiency monolithic GaAs power MESFET amplifier operating with a single low voltage supply for 1.9-GHz digital mobile communication applications , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[3] K. Nishihori. A highy-efficient GaAs power MESFET with P-pocket layers for linear power applications , 1996 .