Analytical model for electrical and thermal transients of self-heating semiconductor devices

Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor.

[1]  K. Tomizawa,et al.  Numerical simulation of submicron semiconductor devices , 1993 .

[2]  S. Clemente,et al.  Transient thermal response of power semiconductors to short power pulses , 1993 .

[3]  Anders Rydberg,et al.  Extraction of thermal time constant in HBTs using small signal measurements , 1997 .

[4]  L. L. Liou,et al.  Theoretical thermal runaway analysis of heterojunction bipolar transistors: Junction temperature rise threshold , 1996 .

[5]  A. L. Palisoc,et al.  Transient thermal study of semiconductor devices , 1990 .

[6]  H. Yamaguchi.  Analysis of Self-Heating in SOI High Voltage MOS Transistor , 1997 .

[7]  J. Choma,et al.  Large signal modeling of HBT's including self-heating and transit time effects , 1992 .

[8]  J. Sitch,et al.  A new large signal HBT model , 1994 .

[9]  D. Seitzer,et al.  Modeling of self-heating in GaAs/AlGaAs HBTs for accurate circuit and device analysis , 1991, [1991] GaAs IC Symposium Technical Digest.

[10]  M. M. Pelella,et al.  Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating , 1998 .

[11]  R. Quere,et al.  A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[12]  A. Chryssafis,et al.  A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors , 1979 .

[13]  Peter M. Asbeck,et al.  Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement , 1992 .

[14]  William Liu,et al.  A survey of thermal-electric feedback coefficients in GaAs-based heterojunction bipolar transistors , 1995 .

[15]  E. S. Schlig,et al.  Thermal properties of very fast transistors , 1970 .

[16]  Roger D. Pollard,et al.  Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[17]  A. Gupta,et al.  CW measurement of HBT thermal resistance , 1992 .

[19]  P. C. Munro,et al.  Simulating the current mirror with a self-heating BJT model , 1991 .

[20]  William Redman-White,et al.  Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques , 1996 .

[21]  Robert Fox,et al.  Thermal impedance extraction for bipolar transistors , 1996 .

[22]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .