A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits

This work describes the development of a combined RF-TLP test set-up. It alternates between pulsed high current characterization and scattering parameter measurements up to 10 GHz in order to investigate the influence of the stress pulses on the RF behaviour of the DUT. As an example, the high current behaviour of a broad band amplifier circuit is analyzed.

[1]  Bart Keppens,et al.  ESD protection solutions for high voltage technologies , 2004 .

[2]  Robert W. Dutton,et al.  RF ESD protection strategies: Codesign vs. low-C protection , 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

[3]  H. Gieser,et al.  Very fast transmission line pulsing of integrated structures and the charged device model , 1998, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part C.

[4]  E. Rosenbaum,et al.  Combined TLP/RF testing system for detection of ESD failures in RF circuits , 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium.