Atomic Layer Deposition of Ta2O5/Polyimide Nanolaminates†

Ta2O5/polyimide nanolaminates are deposited at 170 °C by atomic layer deposition (ALD). The precursors are tantalum ethoxide and water for Ta2O5, and pyromellitic dianhydride (PMDA) and diaminohexane (DAH) for polyimide. The nanolaminates are characterized by X-ray reflection (XRR), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), capacitance and current-voltage measurements, and nanoindentation. The layered structure is confirmed by the XRR data and FESEM images. By controlling the relative thicknesses of the Ta2O5 and polyimide layers, the dielectric and mechanical properties of the nanolaminates are tailored over wide ranges. Dielectric properties of the nanolaminates are improved compared to bare Ta2O5 and polyimide films. Elasticity of the nanolaminate films increases with the polyimide content.

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